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Filtros : "Wagner, S." Limpar

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  • Trabalho de evento-anais periodico

    Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' (2000)

    Mulato, M.; Chen, Y.; Wagner, S.; Zanatta, Antonio Ricardo

    Source: Journal of Non-Crystalline Solids. Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

    Acesso à fonteHow to cite
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    • ABNT

      MULATO, M. et al. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'. Journal of Non-Crystalline Solids. Amsterdam: Instituto de Física de São Carlos, Universidade de São Paulo. Disponível em: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf. Acesso em: 21 maio 2024. , 2000

    • APA

      Mulato, M., Chen, Y., Wagner, S., & Zanatta, A. R. (2000). Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'. Journal of Non-Crystalline Solids. Amsterdam: Instituto de Física de São Carlos, Universidade de São Paulo. Recuperado de http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf

    • NLM

      Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' [Internet]. Journal of Non-Crystalline Solids. 2000 ; 266-269 1260-1264.[citado 2024 maio 21 ] Available from: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf

    • Vancouver

      Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' [Internet]. Journal of Non-Crystalline Solids. 2000 ; 266-269 1260-1264.[citado 2024 maio 21 ] Available from: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf

  • Artigo de periodico

    Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges (2000)

    Mulato, M.; Wagner, S.; Zanatta, Antonio Ricardo

    Source: Journal of the Electrochemical Society. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      MULATO, M. e WAGNER, S. e ZANATTA, Antonio Ricardo. Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges. Journal of the Electrochemical Society, v. 147, n. 5, p. 1829-1834, 2000Tradução . . Acesso em: 21 maio 2024.

    • APA

      Mulato, M., Wagner, S., & Zanatta, A. R. (2000). Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges. Journal of the Electrochemical Society, 147( 5), 1829-1834.

    • NLM

      Mulato M, Wagner S, Zanatta AR. Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges. Journal of the Electrochemical Society. 2000 ; 147( 5): 1829-1834.[citado 2024 maio 21 ]

    • Vancouver

      Mulato M, Wagner S, Zanatta AR. Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges. Journal of the Electrochemical Society. 2000 ; 147( 5): 1829-1834.[citado 2024 maio 21 ]
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